Role of stresses in annealing of ion-implantation damage in Si

Journal Article · Sat Jul 01 00:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90168· OSTI ID:6940269

Seshan, K; EerNisse, E P

Recent results showing a crystallographic orientation dependence of growth kinetics, secondary defects, and stress relief in annealing of ion-implanted Si are shown to be self-consistent if interpreted in terms of the influence of stresses upon annealing processes. The stress influence proposed is microplastic shear which is induced in (112) directions on (111) planes inclined to the implant surface by the biaxial stress created in the implant region by ion-implantation damage. The shear stresses are shown to be dependent on crystallographic orientation in a manner consistent with the model.

• Research Organization: Department of Materials Science and Engineering, University of California, Berkeley, California 94720
• OSTI ID: 6940269
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 33:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
ANNEALING
DISLOCATIONS
ION IMPLANTATION
SHEAR
STRESSES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
LINE DEFECTS
RADIATION EFFECTS
SEMIMETALS
360605* - Materials- Radiation Effects