Stresses and radiation damage in Ar/sup +/ and Ti/sup +/ ion-implanted silicon

Journal Article · Tue Sep 01 00:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339593· OSTI ID:6323800

Madakson, P; Angilello, J

Comparative studies of stress and radiation damage in <111> silicon were carried out after ion implantation with 28-keV Ar/sup +/ and 30-keV Ti/sup +/ to doses ranging from 10/sup 12/ to 10/sup 17/ ions/cm/sup 2/. The effect of annealing at 600 /sup 0/C for 2 h was also investigated. Automatic x-ray diffraction measurement of strains in the specimens shows that in the as-implanted condition the stresses are compressive and they increase linearly with ion dose up to about 10/sup 16/ ions/cm/sup 2/, after which they relieve. This behavior was the same for both the ''reactive'' (Ti) and the ''unreactive'' (Ar) ion implantation. However, after annealing the stresses in the Ar/sup +/ implanted samples remain compressive and those in the samples implanted with Ti/sup +/ become tensile. The change from compressive to tensile stresses is associated with titanium-silicide formation. X-ray diffraction patterns show that the silicide consists of metastable and equilibrium phases. Sheet resistance measurements on the samples with a continuous TiSi/sub 2/ layer show the resistivity to be as low as 14 ..mu cap omega.. cm. Rutherford backscattering channeling studies show radiation damage to increase linearly with ion dose and, in the case of Ar implantation, saturate at doses greater than or equal to5 x 10/sup 14/ ions/cm/sup 2/, due to the complete amorphization of the implanted region. A decrease in defect density with dose occurred at doses >5 x 10/sup 15/ ions/cm/sup 2/ for the Ti implantation. Annealing only reduced the damage observed, except for low doses (less than or equal to10/sup 14/ ions/cm/sup 2/), where complete recrystallization occurred.

• Research Organization: IBM, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
• OSTI ID: 6323800
• Journal Information: J. Appl. Phys.; (United States), Vol. 62:5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
AMORPHOUS STATE
ARGON IONS
DAMAGE
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
RECRYSTALLIZATION
STRESSES
TITANIUM IONS
X-RAY DIFFRACTION
CHARGED PARTICLES
COHERENT SCATTERING
DATA
DIFFRACTION
ELEMENTS
INFORMATION
IONS
NUMERICAL DATA
PHYSICAL PROPERTIES
RADIATION EFFECTS
SCATTERING
SEMIMETALS
360605* - Materials- Radiation Effects