Recrystallization of ion-implanted. cap alpha. -SiC
The annealing behavior of ion-implanted ..cap alpha..-SiC single crystal was determined for samples implanted with 62 keV /sup 14/N to doses of 5.5 x 10/sup 14//cm/sup 2/ and 8.0 x 10/sup 16//cm/sup 2/ and with 260 keV /sup 52/Cr to doses of 1.5 x 10/sup 14//cm/sup 2/ and 1.0 x 10/sup 16//cm/sup 2/. The high-dose samples formed amorphous surface layers to depths of 0.17 ..mu..m (N) and 0.28 ..mu..m (Cr), while for the low doses only highly damaged but not randomized regions were formed. The samples were isochronically annealed up to 1600 /sup 0/C, holding each temperature for 10 min. The remaining damage was analyzed by Rutherford backscattering of 2 MeV He/sup +/, Raman scattering, and electron channeling. About 15% of the width of the amorphous layers regrew epitaxially from the underlying undamaged material up to 1500 /sup 0/C, above which the damage annealed rapidly in a narrow temperature interval. The damage in the crystalline samples annealed linearly with temperature and was unmeasurable above 1000 /sup 0/C.
- Research Organization:
- Institut fuer Festkoerperforschung, Kernforschungsanlage Juelich, Postfach 1913, D-5170 Juelich, Federal Republic of Germany
- OSTI ID:
- 6883611
- Journal Information:
- J. Mat. Res.; (United States), Journal Name: J. Mat. Res.; (United States) Vol. 2:1; ISSN JMREE
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ANNEALING
CARBIDES
CARBON COMPOUNDS
CHARGED PARTICLES
CHROMIUM IONS
CRYSTALS
DAMAGE
ELASTIC SCATTERING
ENERGY RANGE
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
MONOCRYSTALS
NITROGEN IONS
RECRYSTALLIZATION
RUTHERFORD SCATTERING
SCATTERING
SILICON CARBIDES
SILICON COMPOUNDS