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U.S. Department of Energy
Office of Scientific and Technical Information

High temperature metallization system for solar cells and geothermal probes

Technical Report ·
OSTI ID:6937028
Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on semiconducting substrates by RF sputtering from composite cathodes. The films adhere extremely well to Si, GaAs, and GaP during and after thermal cycling from -200/sup 0/C to at least 500/sup 0/C. All films investigated to date have remained amorphous during 1 hour anneals at 500/sup 0/C, and some alloy compositions have been found which remain amorphous after annealing at greater than or equal to 575/sup 0/C. Rutherford backscatter analysis has been used to study the diffusivity of Au in amorphous Ni-Nb. D < 10/sup -18/ cm/sup 2//S was found at 450/sup 0/C. Additional diffusion studies have been performed using Auger profiling. Initial results show that amorphous Ni-Nb and W-Si may be excellent diffusion barriers against Cu and Au, respectively, at temperatures less than or equal to 500/sup 0/C.
Research Organization:
Sandia Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6937028
Report Number(s):
SAND-80-7167
Country of Publication:
United States
Language:
English