Annealing studies of amorphous alloys

Technical Report · Fri Apr 01 04:00:00 EST 1983

DOI:https://doi.org/10.2172/6223102· OSTI ID:6223102

Wiley, J D; Perepezko, J H; Nordman, J E

Amorphous films of the alloys Ni-Nb, Ni-Mo, Mo-Si, and W-Si were sputter deposited on single-crystal semiconductor substrates. One-hour crystallization temperatures of the films were determined to within +-25/sup 0/C by annealing and x-ray diffraction measurements. Interdiffusion between Au or Cu overlayers and the amorphous films were studied by annealing combined with Auger Electron Spectroscopy (AES) profiling, and by Rutherford Backscatter (RBS) analysis. Supplementary measurements used to study structural relaxation and crystallization included resistivity as a function of temperature; DTA and DSC; and electron microscopy.

• Research Organization: Wisconsin Univ., Madison (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6223102
• Report Number(s): SAND-82-7156; ON: DE83012295
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101 -- Metals & Alloys-- Preparation & Fabrication
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALLOYS
AMORPHOUS STATE
ANNEALING
AUGER ELECTRON SPECTROSCOPY
CALORIMETRY
COHERENT SCATTERING
COPPER
CRYSTALLIZATION
DIFFRACTION
ELASTIC SCATTERING
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
EQUIPMENT
ETCHING
GOLD
HEAT TREATMENTS
MATERIALS
METALS
MICROSCOPY
MOLYBDENUM ALLOYS
NICKEL ALLOYS
NIOBIUM ALLOYS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
RUTHERFORD SCATTERING
SCATTERING
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
SPECTROSCOPY
SPUTTERING
SURFACE FINISHING
THERMAL ANALYSIS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTEN ALLOYS
X-RAY DIFFRACTION