Achieving broad-area laser diodes with high output power and single-lobed far-field patterns in the lateral direction by loading a modal reflector
- Mitsubishi Electric Corp., Hyogo (Japan). Optoelectronic and Microwave Devices Lab.
A modal reflector, which consists of a high-reflectivity region surrounded by low-reflectivity regions, is added to the front facet of two types of broad-area laser diodes (LD's) to control the lateral models. One type of LD is the self-aligned laser with a bent active layer (SBA LD) that has a real index-guiding mechanism. The other is a planar-stripe LD that consists of a Zn-diffused region to confine the current flow and has a gain-guiding mechanism. For the SBA LD's with a modal reflector, stable single-lobed far-field patterns (FFP's) are obtained at up to 0.3 and 0.4 W output powers in continuous wave (CW) operation and pulsed operation, respectively. In addition, for planar-stripe LD's with a modal reflector, stable single-lobed FFP's are obtained at up to 0.4 W in CW operation. The lateral modes inside the cavity are analyzed by utilizing a slit model and FFP's are calculated. Good agreement is found between experimental and calculated FFP's for a large Fresnel number.
- OSTI ID:
- 6929085
- Journal Information:
- IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 30:8; ISSN 0018-9197; ISSN IEJQA7
- Country of Publication:
- United States
- Language:
- English
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