Chemical vapor deposition of amorphous semiconductor films. Semiannual report, 1 May 1983-31 October 1984

Technical Report · Thu Mar 01 04:00:00 EST 1984

DOI:https://doi.org/10.2172/6928072· OSTI ID:6928072

This report presents an analysis of intrinsic and phosphorus-doped n-type amorphous silicon films deposited by LPCVD from disilane in a laminar flow tubular reactor. These films were analyzed using SIMs, ESR measurements, optical absorption, and conductivity in light and dark. CVD deposited i layers were used to make platinum Schottky barrier devices and hybrid cells utilizing glow discharge deposited layers in both the ITO/nip/Mo and ITO/pin/Mo configurations. The highest efficiency of hybrid cells with the ITO/ni(CVD)/p(GD)/Mo structure was approximately 1.5%. The highest efficiencies were obtained with thin i layers. The highest efficiency for the ITO/p(GD)/in(CVD)/Mo configuration was 4.0%. A chemical model was developed describing the gas phase reactions and film growth; the model quantitatively describes the effluent composition when the measured growth rate is input. Kinetic rate expressions and constants for growth from higher silanes are being determined for a wide range of reaction conditions.

• Research Organization: Delaware Univ., Newark (USA). Inst. of Energy Conversion
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6928072
• Report Number(s): SERI/STR-211-2230; ON: DE84004489
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
EQUIPMENT
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SILANES
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING