Photovoltaic devices using a-Si:H from higher order silanes. Semiannual report, 1 September 1983-29 February 1984

Technical Report · Mon Oct 01 04:00:00 EDT 1984

OSTI ID:6358629

Delahoy, A E

This report summarizes research performed during a six-month period on hydrogenated amorphous silicon, prepared by chemical vapor deposition using flow methods rather than a static method in order to deposit from a time-invariant gas phase chemistry. Both low-pressure and atmospheric-pressure systems were employed. The feedstock gases were electronic-grade higher order silanes (principally disilane) manufactured by silent electric discharge. Because of the historically poor performance of CVD p layers in p-i-n devices, an effort was made to develop a higher quality p layer. Both silane/diborane and disilane/diborane mixtures were investigated. Using disilane/diborane mixtures at low pressures and very low temperatures (200/sup 0/C) significantly improved LPCVD p layers. P-i-n devices employing these p layers exhibited open-circuit voltages up to 723 mV.

• Research Organization: Chronar Corp., Princeton, NJ (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6358629
• Report Number(s): SERI/STR-211-2498; ON: DE85000522
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
BORANES
BORON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
DEPOSITION
DIRECT ENERGY CONVERTERS
EQUIPMENT
FABRICATION
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SILANES
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING