High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells

Patent · Tue Dec 23 00:00:00 EST 1986

OSTI ID:6928036

Daud, T; Kachare, A H

This patent describes a multijunction silicon solar cell comprising p/n junction solar cells epitaxially grown in layers to receive solar energy in series through the n-type layer of each solar cell. The p-type layer of one is connected to the n-type layer of the next in series by a p+/n+ tunnel junction of III-V or II-VI semiconductor material of higher band-gap than silicon, and has a near perfect lattice match with silicon.

• Assignee: NASA, Washington, DC
• Patent Number(s): US 4631352
• OSTI ID: 6928036
• Resource Relation: Patent File Date: Filed date 17 Dec 1985
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
P-N JUNCTIONS
CRYSTAL GROWTH
CRYSTAL LATTICES
EPITAXY
GRADED BAND GAPS
LAYERS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
SILICON
TUNNEL EFFECT
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
JUNCTIONS
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion