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Title: Temperature dependent mobility in single-crystal and chemical vapor-deposited diamond

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.353018· OSTI ID:6924868
; ; ; ; ;  [1]
  1. Stanford Synchrotron Radiation Laboratory, SLAC Bin 99, P.O. Box 4349, Stanford, California 94309 (United States)

The combined electron and hole mobility of a single-crystal type IIa natural diamond and a polycrystalline diamond film deposited by chemical vapor deposition (CVD) were measured using transient photoconductivity as a function of excitation density (10[sup 13]--10[sup 17] cm[sup [minus]3]) and temperature (120--410 K). In natural diamond the temperature dependence suggests that the mobility is limited by phonon scattering at low free carrier densities, and by electron-hole scattering at high densities. The combined electron and hole phonon-limited mobility at room temperature is 3000 ([plus minus]500) cm[sup 2]/V s. In the CVD film, the mobility at room temperature was estimated to be 50 cm[sup 2]/V s at low excitation densities. The temperature dependence of the mobility-lifetime product at low excitation densities is different from that of natural diamond, and suggests that charged center scattering, rather than acoustic phonon scattering, is the dominant effect. High densities of nitrogen and dislocations are known to be present in the natural diamond, and these appear to be the dominant recombination sites which limit the carrier lifetime. In the polycrystalline film a variety of structural defects and impurities are believed to exist, but it is unknown which of these dominates the transport and recombination properties.

DOE Contract Number:
AC03-76SF00098; W-7405-ENG-48
OSTI ID:
6924868
Journal Information:
Journal of Applied Physics; (United States), Vol. 73:6; ISSN 0021-8979
Country of Publication:
United States
Language:
English