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Title: Picosecond photoconductivity of natural and CVD diamonds

Conference ·
OSTI ID:552190
; ;  [1]
  1. General Physics Institute of Russian Academy of Sciences, Moscow (Russian Federation); and others

Photoexcitation and recombination of nonequilibrium charge carriers in both natural gemstone diamonds and CVD (chemical vapor deposition) polycrystalline diamond films in UV spectrum region have been investigated. Transient picosecond photoconductivity technique applied permitted to conduct measurements with the time resolution better than 200 picoseconds and to register a charge carrier concentration value as low as 10{sup 12} - 10{sup 13} cm{sup -3}. The dependencies of photocurrent amplitude as a function of incident laser radiation intensity in the range from 10{sup 3} to 10{sup 10} W/cm{sup 2} have been obtained. Charge carrier lifetimes had been measured and charge carrier drift mobility were estimated. It is shown that the electronic properties of high quality thick CVD diamond films are comparable to those of the most perfect natural type IIa crystals. Investigation of Raman and luminescence spectra of diamonds have been performed along with scanning electron microscopy studies to characterise bulk and surface structure of tested specimens.

Research Organization:
International Society for Optical Engineering, Washington, DC (United States)
OSTI ID:
552190
Report Number(s):
CONF-9410155-Vol.2428; TRN: 98:009005
Resource Relation:
Conference: 26. annual Boulder damage symposium: laser-induced damage in optical materials, Boulder, CO (United States), 24-26 Oct 1994; Other Information: PBD: [1995]; Related Information: Is Part Of Laser-induced damage in optical materials: 1994. Twenty-sixth annual Boulder damage symposium, proceedings; Bennett, H.E.; Guenther, A.H.; Kozlowski, M.R.; Newnam, B.E.; Soileau, M.J. [eds.]; PB: 722 p.
Country of Publication:
United States
Language:
English

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