Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers

Journal Article · Mon Jan 01 00:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.47025· OSTI ID:6923355

Offsey, S D; Schaff, W J; Tasker, P J; Eastman, L F ^[1]

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1. Dept. of Electrical Engineering, Cornell Univ., Ithaca, NY (US)

This paper reports GaAs--AlGaAs and strained layer In{sub 0.3}Ga{sub 0.7}As--GaAs--AlGaAs graded index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy. The strained layer lasers have threshold currents of 12 mA for 3 {mu}m {times} 400 {mu}m devices (1000 A/cm{sup 2}) and threshold current densities of 167 A/cm{sup 2} for 150 {mu}m {times} 800 {mu}m devices. The threshold currents of strained layer InGaAs lasers are lower than those of GaAs lasers for all dimensions tested with 20 {mu}m wide GaAs devices exhibiting threshold currents three times those of In{sub 0.3}Ga{sub 0.7}As devices. Microwave modulation of 10 {mu}m {times} 500 {mu}m strained layer lasers with simple mesa structures yields bandwidths of 6 GHz. For all dimensions tested, strained layer InGaAs devices have greater bandwidths than GaAs devices. These measurements confirm theoretical predictions of the effects of valence band modification due to biaxially compressive strain.

• OSTI ID: 6923355
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Vol. 2:1; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
47 OTHER INSTRUMENTATION
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ALUMINIUM ARSENIDES
STIMULATED EMISSION
GALLIUM ARSENIDES
HETEROJUNCTIONS
QUANTUM EFFICIENCY
INDIUM ARSENIDES
SEMICONDUCTOR LASERS
FABRICATION
CURRENT DENSITY
FREQUENCY MODULATION
LASER MATERIALS
LAYERS
MICROWAVE RADIATION
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PLASMA CONFINEMENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFINEMENT
EFFICIENCY
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
MATERIALS
MODULATION
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)
657002 - Theoretical & Mathematical Physics- Classical & Quantum Mechanics
440600 - Optical Instrumentation- (1990-)
700101 - Fusion Energy- Plasma Research- Confinement
Heating
& Production