Reactive chemical intermediates in metalorganic chemical vapor deposition of GaAs

Journal Article · Mon Oct 12 04:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108399· OSTI ID:6916704

Killeen, K P ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Reactive chemical gas-phase intermediate species important in the metalorganic chemical vapor deposition growth process of GaAs have been identified for the first time using [ital in] [ital situ] ultraviolet absorption spectroscopy. Spectral features from Ga, GaH, and GaCH[sub 3] were observed during thermal decomposition of trimethylgallium (TMGa) in hydrogen gas. Evidence for free radical reactions involving CH[sub 3] and H in the pyrolysis of TMGa is presented. The addition of arsine to the mixture is found to change the reaction pathways as evident from the production of AsH[sub 2] and the disappearance of Ga and GaH. Gas-phase decomposition of the metalorganic species in hydrogen can produce gallium under the conditions of high pressure atomic layer epitaxy.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6916704
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 61:15; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
ABSORPTION SPECTRA
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DECOMPOSITION
DEPOSITION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PNICTIDES
PYROLYSIS
RADICALS
SPECTRA
SURFACE COATING
THERMOCHEMICAL PROCESSES
ULTRAVIOLET SPECTRA