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Hydrogen chemisorption and reaction on GaAs(100)

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
DOI:https://doi.org/10.1116/1.576433· OSTI ID:6333184
 [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)
We have studied the chemisorption of atomic hydrogen and deuterium on gallium-rich (4{times}6) and arsenic-rich {ital c}(2{times}8) GaAs(100) reconstructed surfaces using temperature programmed desorption (TPD). Molecular hydrogen (specifically D{sub 2}) desorption from the gallium-rich (4{times}6) surface exhibits a peak at 480--510 K, depending on the initial coverage. By comparing results from the different reconstructions we conclude that the desorption of molecular hydrogen primarily arises from surface GaH{sub {ital x}} species. The arsenic-rich {ital c}(2{times}8) surface yields a small amount of molecular hydrogen desorption around 660 K, apparently arising from surface AsH{sub {ital x}} species. In addition to molecular hydrogen, chemisorbed arsine is detected desorbing from both reconstructions around 330--340 K. This result indicates that atomic hydrogen can etch the GaAs surface. For the maximum exposure studied, {similar to}15% of the surface arsenic on the arsenic-rich {ital c}(2{times}8) surface is converted to arsine.
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6333184
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 8:6; ISSN 0734-2101; ISSN JVTAD
Country of Publication:
United States
Language:
English