Fundamental surface chemistry of GaAs OMVPE

Conference · Mon May 01 04:00:00 EDT 1995

OSTI ID:70821

Creighton, J R; Truong, C M

Organometallic and hydride compounds are widely used as precursors for the epitaxial growth of GaAs and other compound semiconductors. These precursors are most commonly used to perform organometallic vapor phase epitaxy (OMVPE) and also in related deposition techniques such as atomic layer epitaxy (ALE) and metalorganic molecular beam epitaxy (MOMBE). We have investigated the surface chemical properties of these precursors on GaAs(100) using a variety of surface science diagnostics. Results have shed light on the mechanisms of precursor decomposition which lead to film growth and carbon doping. For instance, kinetics of trimethylgallium (TMGa) decomposition on the Ga-rich and As-rich surfaces, measured by TPD, are in semiquantitative agreement with ALE results; indicating that the dominant growth mechanism during ALE is heterogeneous. Furthermore, there is no compelling evidence for the production of methane (CH{sub 4}) on the GaAs surface when TMGa and arsine (AsH{sub 3}) are coadsorbed.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 70821
• Report Number(s): SAND--95-0848C; CONF-9505216--1; ON: DE95011606
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ORGANOMETALLIC COMPOUNDS
VAPOR PHASE EPITAXY