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U.S. Department of Energy
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Research on amorphous silicon-germanium alloys for tandem solar cells: Annual subcontract report, 1 July 1986--31 August 1987

Technical Report ·
OSTI ID:6914592
The objective of this work is to explore the deposition conditions necessary to produce amorphous Si-Ge alloys with a band gap near 1.3 to 1.4 eV whose photo-electronic properties will be comparable to those of a-Si:H. It is essential to understand why the photoconductivity of a-Si/sub 1-x/Ge/sub x/:H:F is superior to that of a-Si/sub 1-x/Ge/sub x/:H, while most of the commonly measured optical and electronic properties remain unchanged. The focus of this investigation was on deposition conditions and on the microstructure of the films as revealed by transmission electron microscopy, gas evolution, and differential scanning calorimetry, concentrating on alloys with a high Ge content. Films were made both by glow discharge and by photochemical vapor deposition in a new type of apparatus. Structure, very important in determining photoelectronic properties, depends on the totality of the deposition parameter, and it is therefore important to understand the conditions in the plasma and at the interface of the growing film, when SiH/sub 4/, GeH/sub 4/, and H/sub 2/ are present in different concentrations, whatever the method of deposition. 3 refs., 8 figs., 2 tabs.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Harvard Univ., Cambridge, MA (USA). Div. of Applied Sciences
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6914592
Report Number(s):
SERI/STR-211-3351; ON: DE88001168
Country of Publication:
United States
Language:
English