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Research on amorphous silicon-germanium alloys for tandem solar cells

Technical Report ·
DOI:https://doi.org/10.2172/5691478· OSTI ID:5691478
This report presents results of research on amorphous silicon- germanium alloys for tandem solar-cell applications. A study was completed of a-Si{sub 1 {minus} x}Ge{sub x}:H and a-Si{sub 1 {minus} x}Ge{sub x}:H:F alloys. This included extensive structural examination by transmission electron spectroscopy, gas evolution, and differential scanning calorimetry, and also a measurement of the dependence of the mobility-lifetime product for electrons in the two types al alloys. It also included a project to deposit for electron in the two types of alloys. It also included a project to deposit a- Si:H and its alloys by photochemical vapor deposition, which is described. Microstructure, on a scale of 100 angstroms, appears to be an important determinant of film properties. Structure can also be modified by altering the proportions of SiH{sub 4}, GeH{sub 4}, and H{sub 2} used in growing the films. Films grown by photo-CVD were compared with those grown by conventional glow discharge. 65 refs., 19 figs.
Research Organization:
Harvard Univ., Cambridge, MA (USA). Div. of Applied Sciences
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5691478
Report Number(s):
SERI/STR-211-3525; ON: DE89009436
Country of Publication:
United States
Language:
English