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Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained-layer superlattices

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.100032· OSTI ID:6910561

We report electrical transport and optical studies of the efficiency with which an In/sub 0.2/Ga/sub 0.8/As/GaAs strained-layer superlattice (SLS) can filter threading dislocations generated in a thick In/sub 0.1/ Ga/sub 0.9/ As layer grown on GaAs. The electrical studies, the first of their kind, rely on a novel test structure which allows electrical characterization of just the top portion of the SLS, with the bottom portion acting as the dislocation filter. For optical characterization we detect dislocations directly by photoluminescence microscopy. The electrical results show that approx.3--6 periods of filtering are needed to attain high mobilities. The photoluminescence microimages show a small density of dislocations near the top of an eight-period SLS but no dislocations for 11 or more periods. Filtering with In/sub 0.2/Ga/sub 0.8/As/GaAs SLS's is more effective than with GaAs/sub 0.8/P/sub 0.2//GaAs SLS's, possibly because of larger interlayer differences in strain and elastic constants for the former.

Research Organization:
Sandia National Laboratories, Albuquerque, New Mexico 87185
OSTI ID:
6910561
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:12; ISSN APPLA
Country of Publication:
United States
Language:
English