Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained-layer superlattices
We report electrical transport and optical studies of the efficiency with which an In/sub 0.2/Ga/sub 0.8/As/GaAs strained-layer superlattice (SLS) can filter threading dislocations generated in a thick In/sub 0.1/ Ga/sub 0.9/ As layer grown on GaAs. The electrical studies, the first of their kind, rely on a novel test structure which allows electrical characterization of just the top portion of the SLS, with the bottom portion acting as the dislocation filter. For optical characterization we detect dislocations directly by photoluminescence microscopy. The electrical results show that approx.3--6 periods of filtering are needed to attain high mobilities. The photoluminescence microimages show a small density of dislocations near the top of an eight-period SLS but no dislocations for 11 or more periods. Filtering with In/sub 0.2/Ga/sub 0.8/As/GaAs SLS's is more effective than with GaAs/sub 0.8/P/sub 0.2//GaAs SLS's, possibly because of larger interlayer differences in strain and elastic constants for the former.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- OSTI ID:
- 6910561
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:12; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
LINE DEFECTS
LUMINESCENCE
MOBILITY
NUMERICAL DATA
OPTICAL PROPERTIES
PARTICLE MOBILITY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
STRAINS
SUPERLATTICES