Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained-layer superlattices
Journal Article
·
· Appl. Phys. Lett.; (United States)
We report electrical transport and optical studies of the efficiency with which an In/sub 0.2/Ga/sub 0.8/As/GaAs strained-layer superlattice (SLS) can filter threading dislocations generated in a thick In/sub 0.1/ Ga/sub 0.9/ As layer grown on GaAs. The electrical studies, the first of their kind, rely on a novel test structure which allows electrical characterization of just the top portion of the SLS, with the bottom portion acting as the dislocation filter. For optical characterization we detect dislocations directly by photoluminescence microscopy. The electrical results show that approx.3--6 periods of filtering are needed to attain high mobilities. The photoluminescence microimages show a small density of dislocations near the top of an eight-period SLS but no dislocations for 11 or more periods. Filtering with In/sub 0.2/Ga/sub 0.8/As/GaAs SLS's is more effective than with GaAs/sub 0.8/P/sub 0.2//GaAs SLS's, possibly because of larger interlayer differences in strain and elastic constants for the former.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- OSTI ID:
- 6910561
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:12; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical imaging of dislocations in strained-layer superlattices and lattice-mismatched epilayers
Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices
Low-temperature pressure-dependent magneto-optic measurements in strained-layer superlattices
Conference
·
Mon Dec 31 23:00:00 EST 1984
·
OSTI ID:6179052
Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices
Journal Article
·
Sun Sep 01 00:00:00 EDT 1985
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5576447
Low-temperature pressure-dependent magneto-optic measurements in strained-layer superlattices
Journal Article
·
Fri Aug 15 00:00:00 EDT 1986
· AIP Conf. Proc.; (United States)
·
OSTI ID:6882761
Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
LINE DEFECTS
LUMINESCENCE
MOBILITY
NUMERICAL DATA
OPTICAL PROPERTIES
PARTICLE MOBILITY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
STRAINS
SUPERLATTICES
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
LINE DEFECTS
LUMINESCENCE
MOBILITY
NUMERICAL DATA
OPTICAL PROPERTIES
PARTICLE MOBILITY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
STRAINS
SUPERLATTICES