Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices

Journal Article · Sun Sep 01 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96099· OSTI ID:5576447

Gourley, P L; Biefeld, R M; Dawson, L R

The microscopic optical quality of thick (approx.1 ..mu..m) III-V semiconductor epitaxial layers, mismatched to their substrates, is examined by photoluminescence microimaging. The layers include several kinds of strained-layer superlattices (GaP/GaAs/sub x/P/sub 1-x/, GaAs/GaAs/sub 1-x/P/sub x/, and GaAs/In/sub x/Ga/sub 1-x/As) and associated alloys. Microscopic images of epilayer luminescence directly reveal the presence of misfit dislocations which appear as dark line defects. These defects can be completely eliminated in the strained-layer superlattices if these structures have thin layers, less than the critical thickness for elastic accommodation, and sufficient numbers of interfaces of block threading dislocations.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5576447
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIMENSIONS
DISLOCATIONS
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INTERFACES
LAYERS
LINE DEFECTS
LUMINESCENCE
MICROSCOPY
OPTICAL MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
SUPERLATTICES
THICKNESS
THIN FILMS