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Title: Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices

Abstract

The microscopic optical quality of thick (approx.1 ..mu..m) III-V semiconductor epitaxial layers, mismatched to their substrates, is examined by photoluminescence microimaging. The layers include several kinds of strained-layer superlattices (GaP/GaAs/sub x/P/sub 1-x/, GaAs/GaAs/sub 1-x/P/sub x/, and GaAs/In/sub x/Ga/sub 1-x/As) and associated alloys. Microscopic images of epilayer luminescence directly reveal the presence of misfit dislocations which appear as dark line defects. These defects can be completely eliminated in the strained-layer superlattices if these structures have thin layers, less than the critical thickness for elastic accommodation, and sufficient numbers of interfaces of block threading dislocations.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Laboratories, Albuquerque, New Mexico 87185
OSTI Identifier:
5576447
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.; (United States)
Additional Journal Information:
Journal Volume: 47:5
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; DISLOCATIONS; LINE DEFECTS; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; GALLIUM PHOSPHIDES; SUPERLATTICES; INTERFACES; LAYERS; THICKNESS; THIN FILMS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; FILMS; GALLIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; 360602* - Other Materials- Structure & Phase Studies

Citation Formats

Gourley, P L, Biefeld, R M, and Dawson, L R. Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices. United States: N. p., 1985. Web. doi:10.1063/1.96099.
Gourley, P L, Biefeld, R M, & Dawson, L R. Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices. United States. https://doi.org/10.1063/1.96099
Gourley, P L, Biefeld, R M, and Dawson, L R. Sun . "Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices". United States. https://doi.org/10.1063/1.96099.
@article{osti_5576447,
title = {Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices},
author = {Gourley, P L and Biefeld, R M and Dawson, L R},
abstractNote = {The microscopic optical quality of thick (approx.1 ..mu..m) III-V semiconductor epitaxial layers, mismatched to their substrates, is examined by photoluminescence microimaging. The layers include several kinds of strained-layer superlattices (GaP/GaAs/sub x/P/sub 1-x/, GaAs/GaAs/sub 1-x/P/sub x/, and GaAs/In/sub x/Ga/sub 1-x/As) and associated alloys. Microscopic images of epilayer luminescence directly reveal the presence of misfit dislocations which appear as dark line defects. These defects can be completely eliminated in the strained-layer superlattices if these structures have thin layers, less than the critical thickness for elastic accommodation, and sufficient numbers of interfaces of block threading dislocations.},
doi = {10.1063/1.96099},
url = {https://www.osti.gov/biblio/5576447}, journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 47:5,
place = {United States},
year = {1985},
month = {9}
}