Reliability effects of x-ray lithography exposures on submicron-channel MOSFETs
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6908002
- Army Research Lab., Adelphi, MD (United States)
Submicron-channel-length n and p-channel MOSFETs subjected to channel hot-carrier stressing were investigated, and the reliability of devices with and without exposure to simulated x-ray lithography processing steps was compared. No significant differences were observed between the sample groups.
- OSTI ID:
- 6908002
- Report Number(s):
- CONF-930704--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 40:6Pt1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE CARRIERS
ELECTROMAGNETIC RADIATION
FIELD EFFECT TRANSISTORS
IONIZING RADIATIONS
MASKING
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RELIABILITY
SEMICONDUCTOR DEVICES
TRANSISTORS
TRAPPING
X RADIATION
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE CARRIERS
ELECTROMAGNETIC RADIATION
FIELD EFFECT TRANSISTORS
IONIZING RADIATIONS
MASKING
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RELIABILITY
SEMICONDUCTOR DEVICES
TRANSISTORS
TRAPPING
X RADIATION