Synchrotron X-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides

Journal Article · Sat Aug 01 04:00:00 EDT 1998 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-998-0124-1· OSTI ID:655356

Tanaka, Yuusuke; Tanabe, Akira; Suzuki, Katsumi ^[1]; Miyatake, Tsutomu; Hirose, Masaki ^[2]

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1. NEC Corp., Tsukuba, Ibaraki (Japan). Microelectronics Research Labs.
2. Sumitomo Heavy Industries Ltd. (Japan)

The effects of synchrotron x-ray irradiation on the device characteristics and hot-carrier resistance of n- and p-channel metal oxide semiconductor field effect transistors (MOSFETs) with 4 nm thick gate oxides are investigated. In p-channel MOSFETs, device characteristics were significantly affected by the x-ray irradiation but completely recovered after annealing, while the device characteristics in n-channel MOSFETs were not noticeably affected by the irradiation. This difference appears to be due to a difference in interface-state generation. In p-channel MOSFETs, defects caused by boron-ion penetration through the gate oxides may be sensitive to x-ray irradiation, causing the generation of many interface states. These interface states are completely eliminated after annealing in hydrogen gas. The effects of irradiation on the resistance to hot-carrier degradation in annealed 4 nm thick gate-oxide MOSFETs were negligible even at an x-ray dose of 6,000 mJ/cm{sup 2}.

• Sponsoring Organization: USDOE
• OSTI ID: 655356
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 8 Vol. 27; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
CARRIER MOBILITY
INTERFACES
MOSFET
PHYSICAL RADIATION EFFECTS
X RADIATION