Radiation hardness of MOSFET's with N[sub 2]O-nitrided gate oxides

Journal Article · Sun Aug 01 04:00:00 EDT 1993 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.223726· OSTI ID:6195536

Lo, G Q; Joshi, A B; Kwong, D L ^[1]

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1. Univ. of Texas, Austin, (United States). Microelectronics Research Center

Radiation hardness of furnace N[sub 2]O-nitrided gate oxides was investigated for both n- and p-channel MOSFET's by exposing devices in an X-ray radiation system. An enhanced degradation was observed in both control and N[sub 2]O-nitrided MOSFET's with reduction in the channel length. Compared to MOSFET's with control oxides, N[sub 2]O-nitrided MOSFET's show an enhanced radiation hardness against positive charge buildup and interface state generation. The authors also studied channel hot-carrier effects on the irradiated devices with subsequent low-temperature forming gas annealing. Results show that N[sub 2]O-nitrided oxides have a greatly enhanced resistance against radiation-induced neutral electron trap generation.

• OSTI ID: 6195536
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:8; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CHARGE COLLECTION
COMPARATIVE EVALUATIONS
ELECTROMAGNETIC RADIATION
EVALUATION
FIELD EFFECT TRANSISTORS
HARDENING
IONIZING RADIATIONS
MOS TRANSISTORS
MOSFET
NITROGEN COMPOUNDS
NITROGEN OXIDES
NITROUS OXIDE
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
TRAPS
X RADIATION