Single-event-induced charge collection and direct channel conduction in submicron MOSFETs

Conference · Thu Dec 01 04:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6450433

Velacheri, S; Massengill, L W; Kerns, S E ^[1]

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1. Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering

The single-event (SE) charge collection of an n-channel submicron MOSFET is described using three dimensional device simulations. Ion hits in the drain and in the channel region are considered. For submicron MOSFETs, the authors show simulation evidence that there may exist a direct source-drain conduction process induced by the ion, called ion-triggered channeling (ITC), which may be an important SE upset mechanism in deep submicron scaling. The further study of increased ion-track-length to device-gate-length ratios indicate that the direct source-drain conduction process assumes increased importance for increased scaling.

• OSTI ID: 6450433
• Report Number(s): CONF-940726--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 41:6Pt1
• Country of Publication: United States
• Language: English

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Instruments
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED-PARTICLE TRANSPORT
COMPUTERIZED SIMULATION
ERRORS
FIELD EFFECT TRANSISTORS
MOS TRANSISTORS
MOSFET
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS