Field-induced phase switching and electrically driven strains in sol-gel derived antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O{sub 3} thin layers
- Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
- School of Materials, University of Leeds, Leeds LS2 9JT (United Kingdom)
- Department of Materials Science and Engineering, Kunsan National University, Kunsan 573-360 (Korea, Republic of)
Tin-modified lead zirconate titanate thin layers were prepared by a sol-gel method. A room- temperature antiferroelectric (AFE) phase composition Pb{sub 0.99}Nb{sub 0.02}[(Zr{sub 0.58}Sn{sub 0.42}){sub 0.96}Ti{sub 0.04}] {sub 0.98}O{sub 3} was prepared and examined for weak- and high-field dielectric properties as a function of temperature, with emphasis on field-induced AFE-ferroelectric (FE) switching characteristics. Thin layers processed with a lead oxide cover coat were found to be free of any secondary phases and showed improved properties. Room-temperature values of dielectric constant {ital K}{prime}=390 and saturation polarization {ital P}{sub {ital s}}=20 {mu}C/cm{sup 2} were obtained with field-induced strains up to 0.15% in submicron grain structures. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- University of Illinois
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 69044
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 78; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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