Antiferroelectric-ferroelectric switching and induced strains for sol-gel derived lead zirconate thin layers
- Department of Materials Science and Engineering, Materials Research Laboratory, and Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Lead zirconate (PZ) thin layers were formed by a sol-gel method and crystallized with a pseudocubic (111) or (100) preferred orientation. The field-forced antiferroelectric (AFE)-to-ferroelectric (FE) phase transformation behavior was examined by Sawyer--Tower measurements. Dielectric properties were measured as a function of temperature and frequency, and the field-induced transformational strain was measured by interferometry. Both the high-field hysteresis behavior and the temperature-dependent weak-field dielectric properties were found to be strongly dependent on preferred orientation. An increase in the remanent polarization and dielectric constant was observed under high electric field strengths at room temperature, or for lower field strengths at higher temperature. Strains as large as 0.7% were determined for the field-forced AFE-to-FE transformation. AFE-to-FE switching was demonstrated with full saturation at room temperature for high dielectric strength (100 MV/m) thin layers (300 nm).
- Research Organization:
- University of Illinois
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 142582
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 75; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Field-induced phase switching and electrically driven strains in sol-gel derived antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O{sub 3} thin layers
Fabrication of antiferroelectric PLZT films on metal foils.