Properties and orientation of antiferroelectric lead zirconate thin films grown by MOCVD.
Single-phase polycrystalline PbZrO{sub 3} (PZ) thin films, 3000-6000 {angstrom} thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO{sub 2}/Si substrates at {approximately}525 C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO{sub 2}/Si (Pt/Ti/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 {angstrom} thick PbTiO{sub 3} (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO{sub 2} template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.03-0.01. The PZ films with (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase with a polarization of {approx}34 {micro}C/cm{sup 2}, and the energy that was stored during switching was 7.1 J/cm{sup 3}. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 350 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 10859
- Report Number(s):
- ANL/MSD/CP-96706
- Country of Publication:
- United States
- Language:
- English
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