Microstructure and properties of PbZr{sub 0.6}Ti{0.4}O{sub 3} thin films deposited on template layers.

Journal Article · Fri Sep 01 04:00:00 EDT 2000 · J. Mater. Res.

DOI:https://doi.org/10.1557/JMR.2000.0283· OSTI ID:942737

Koritala, R E; Lanagan, M T; Chen, N; Bai, G R; Huang, Y; Streiffer, S K

Polycrystalline Pb(Zr{sub x}Ti{sub 1-x})O{sub 3} thin films with x = 0.6 and 1.0 were deposited at low temperatures (450-525 {sup o}C) on (111)Pt/Ti/SiO{sub 2}/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO{sub 3} or TiO{sub 2}. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO{sub 3} films on Pt/Ti/SiO{sub 2}/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: LDRD; SC
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 942737
• Report Number(s): ANL/ET/JA-34112
• Journal Information: J. Mater. Res., Journal Name: J. Mater. Res. Journal Issue: 9 ; Sep. 2000 Vol. 15; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
BREAKDOWN
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
LAYERS
LEAD OXIDES
MICROSTRUCTURE
ORIENTATION
PERMITTIVITY
POLARIZATION
PZT
SUBSTRATES
TEMPERATURE RANGE 0065-0273 K
TEXTURE
THIN FILMS
TITANIUM OXIDES
TRANSFORMATIONS
X-RAY DIFFRACTION
ZIRCONIUM OXIDES