Epitaxial growth of Y{sub 2}O{sub 3}:Eu thin films on LaAlO{sub 3}

Journal Article · Fri Oct 01 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124971· OSTI ID:689935

Gao, H ^[1]; Kumar, D; Cho, K G; Holloway, P H; Singh, R K ^[2]; Fan, X D; Yan, Y; Pennycook, S J ^[1]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6030 (United States)
2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States)

We report the epitaxial growth of europium-activated yttrium oxide (Y{sub 2}O{sub 3}:Eu) (001) thin films on LaAlO{sub 3} (001) using laser ablation deposition at a substrate temperature of 775&hthinsp;{degree}C and 10 Hz pulse repetition rate. The orientation relationship between the films and the substrates is [110]Y{sub 2}O{sub 3}{parallel}[100]LaAlO{sub 3} and [{minus}110]Y{sub 2}O{sub 3}{parallel}[010]LaAlO{sub 3} which results in a lattice mismatch of only 0.8{percent}. Transmission electron microscopy (TEM) of the films reveals the single crystalline Y{sub 2}O{sub 3}:Eu thin film to contain small pores. Scanning transmission electron microscopy (STEM) imaging of the films shows the substrate always terminates with the Al sublattice. Moreover, the STEM reveals that no precipitates of Eu had formed in the films. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 689935
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 75; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
ALUMINIUM OXIDES
DOPED MATERIALS
EPITAXY
EUROPIUM
EUROPIUM ADDITIONS
GRAIN ORIENTATION
INTEGRATED CIRCUITS
LANTHANUM OXIDES
POROUS MATERIALS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
YTTRIUM COMPOUNDS
YTTRIUM OXIDES