Epitaxial LaAlO{sub 3} thin film on silicon: Structure and electronic properties

Journal Article · Mon Apr 30 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2736277· OSTI ID:20971900

Mi, Y Y; Yu, Z; Wang, S J; Lim, P C; Foo, Y L; Huan, A C. H.; Ong, C K ^[1]

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1. Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

Epitaxial LaAlO{sub 3} films have been grown on Si (001) by molecular beam epitaxy with an ultrathin SrTiO{sub 3} seed layer. High resolution x-ray diffraction and transmission electron microscopy show the high quality epitaxial structure of LaAlO{sub 3} films, and the epitaxial relationship of LaAlO{sub 3} with Si is LaAlO{sub 3}(001)(parallel sign)Si(001) and LaAlO{sub 3}[100](parallel sign)Si[110]. The band gap of epitaxial LaAlO{sub 3} films was measured to be 6.5{+-}0.1 eV from O 1s loss spectra. Band offsets between crystalline LaAlO{sub 3} films and Si were determined to be partitioned equally with 2.86{+-}0.05 eV for valence-band offset and 2.52{+-}0.1 eV for conduction-band offset by using x-ray photoelectron spectroscopy.

• OSTI ID: 20971900
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINATES
CRYSTAL GROWTH
ENERGY GAP
LANTHANUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
RESOLUTION
SILICON
STRONTIUM TITANATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY