Persistent photoconductivity in Ga{sub 1{minus}x}In{sub x}N{sub y}As{sub 1{minus}y}

Journal Article · Wed Sep 01 04:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124865· OSTI ID:689923

Li, J Z; Lin, J Y; Jiang, H X ^[1]; Geisz, J F; Kurtz, S R ^[2]

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1. Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)
2. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

Electrical properties of unintentionally doped {ital p}-type Ga{sub 0.95}In{sub 0.05}N{sub 0.013}As{sub 0.987} quaternary alloys grown by metal{endash}organic vapor-phase epitaxy have been investigated by Hall-effect and photoconductivity measurements. Persistent photoconductivity (PPC) has been observed in this material at temperatures T{lt}320&hthinsp;K. The PPC buildup and decay kinetics have been systematically measured at different temperatures and photoexcitation energies and formulated in the context of lattice-relaxed deep levels (or {ital AX}-like centers). The parameters which characterize the {ital AX} centers in GaInNAs, namely, the thermal and optical ionization energies, hole capture barrier, and the Stokes shift, have been determined. Our results indicate that {ital AX}-like deep levels strongly influence the electronic properties of the GaInNAs quaternary system. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 689923
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 75; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ENERGY LEVELS
GALLIUM ARSENIDES
GALLIUM NITRIDES
HALL EFFECT
INDIUM COMPOUNDS
INDIUM NITRIDES
IONIZATION
PHOTOCONDUCTIVITY
TEMPERATURE DEPENDENCE
VAPOR PHASE EPITAXY