Deep donor model for the persistent photoconductivity effect

Journal Article · Mon Mar 10 04:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96734· OSTI ID:5953278

Hjalmarson, H P; Drummond, T J

It is proposed that a persistent photoconductivity (PPC) effect is universally produced by deep donors. The general requirements of a class of models which explains the PPC effect in semiconductors are discussed. In particular, donor dopants such as Si and Te in Ga/sub 1-x/Al/sub x/As with xapprox.0.3 are conjectured to be deep and responsible for the PPC effect attributed to DX centers consisting of donor-vacancy pairs. It is shown that the Si donor has properties which explain the known data attributed to the DX center; these data include (1) the slow capture rate at low temperatures, (2) the thermally activated capture rate at high temperatures, and (3) the shape of the photoexcitation cross section. However, in contrast with the DX-center model, the deep donor model does not require a high trapped vacancy concentration ((V)approx.10/sup 18/ cm/sup -3/) to explain the PPC effect in highly doped semiconductors.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5953278
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
MATERIALS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PNICTIDES
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
TELLURIUM
VACANCIES