Persistent photoconductivity in n-type GaN

Journal Article · Fri Aug 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119738· OSTI ID:538377

Hirsch, M T; Wolk, J A; Walukiewicz, W; Haller, E E ^[1]

---

1. Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720 (United States)

We report on the spectral and temperature dependence of persistent photoconductivity (PPC) in metal-organic chemical vapor deposition grown unintentionally doped n-type GaN. The PPC effect is detectable up to temperatures of at least 352 K, the highest temperature used in this study. At 77 K, the conduction persists at a level 80{percent} higher than the equilibrium dark conduction for over 10{sup 4} s after removing the excitation. We have determined the spectral dependence for the optical cross section for PPC and obtain an optical ionization energy of {approximately}2.7 eV. The temperature dependence of the photoconductivity decay and its nonexponential shape are explained by a distribution of capture barriers with a mean capture barrier of 0.2 eV and a width of {approximately}26 meV. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 538377
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 71; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DECAY
DOPED MATERIALS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
METASTABLE STATES
PHOTOCONDUCTIVITY
TEMPERATURE DEPENDENCE
THIN FILMS