Ranges and depth distributions of 200-keV He ions channeled in Si, Ge, and GaAs crystals
Journal Article
·
· J. Appl. Phys.; (United States)
We report depth distributions of 200-keV He ions channeled in the <100> and <110> directions of Si, Ge, and GaAs crystals and in a random orientation of each crystal, measured using secondary ion mass spectrometry. The <100> channeled profiles agree with the random profiles within experimental error. The <110> channeled profiles are about 1.7, 2.3, and 2.2 times as deep as the random peaks (projected range) for the three crystals, respectively. Assuming velocity-proportional electronic stopping, values of electronic stopping are calculated for He in Si, Ge, and GaAs. Fractions of He ions backscattered into the vacuum are estimated. Profiles for Ge and GaAs, with the same average atomic number, are compared. Range and profile shape parameters are tabulated.
- Research Organization:
- Hughes Research Laboratories, Malibu, California 90265
- OSTI ID:
- 6898323
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:7; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
COLLISIONS
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
HELIUM IONS
ION CHANNELING
ION COLLISIONS
ION IMPLANTATION
IONS
MASS SPECTROSCOPY
METALS
ORIENTATION
PNICTIDES
RADIATION TRANSPORT
SEMIMETALS
SILICON
SPECTROSCOPY
STOPPING POWER
360605 -- Materials-- Radiation Effects
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
COLLISIONS
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
HELIUM IONS
ION CHANNELING
ION COLLISIONS
ION IMPLANTATION
IONS
MASS SPECTROSCOPY
METALS
ORIENTATION
PNICTIDES
RADIATION TRANSPORT
SEMIMETALS
SILICON
SPECTROSCOPY
STOPPING POWER