Optimized energy window of He beams for accurate determination of depth in channeling Rutherford backscattering spectrometry

Journal Article · Mon May 30 04:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1941454· OSTI ID:20702411

Lin, Shao; Wang, Y Q; Zhang, X; Wetteland, C J; Nastasi, M; Thompson, P E; Mayer, J W ^[1]

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1. Material Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545-1663 (United States)

We propose a method to improve accurate determination of damage/impurity depth profiles by channeling Rutherford backscattering by using {sup 4}He{sup +} beams in an energy window of 400-800 keV. This is based on the study of the stopping power of {sup 4}He{sup +} ions as a function of incident energy along the Si <100> axis, which shows that the channeling stopping power within the above energy window is close to the random stopping power. Experiments on 100 nm deep Sb-doped Si superlattices show that the approach significantly reduces the error in determining the depth location of Sb, for example, from 8% by using 2-MeV {sup 4}He{sup +} to 1% by using 600-keV {sup 4}He{sup +} ions.

• OSTI ID: 20702411
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
CHANNELING
DOPED MATERIALS
ERRORS
HELIUM 4 BEAMS
HELIUM IONS
IMPURITIES
KEV RANGE 100-1000
MEV RANGE 01-10
RANDOMNESS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
STOPPING POWER
SUPERLATTICES