Computer simulation of channeling in Si and GaAs crystals
Conference
·
OSTI ID:199604
- Institute of Nuclear Research of the Hungarian Acad. Sci., Debrecen (Hungary)
A theoretical model and a Monte-Carlo based algorithm was developed to calculate the stopping power of energetic ions in crystals and the energy loss and range of the ions in different low-index and random directions. For model-calculations Zinc-blende crystals were chosen (Si and GaAs) because of the availability of this material in good form for experimental purposes. The crystals were experimentally investigated and the simulation were performed in the main crystal-directions and also in random direction. The calculated stopping powers and energy-loss spectra were compared with the authors` experimental results and with those from the literature.
- OSTI ID:
- 199604
- Report Number(s):
- CONF-941129--
- Country of Publication:
- United States
- Language:
- English
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