Structural and electrical properties of La[sub 0. 5]Sr[sub 0. 5]CoO[sub 3] epitaxial films

Journal Article · Mon Apr 26 04:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.109474· OSTI ID:6892720

Cheung, J T; Morgan, P E.D. ^[1]; Lowndes, D H; Zheng, X ^[2]; Breen, J ^[3]

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1. Rockwell International Science Center, P.O. Box 1085, Thousand Oaks, California 91360 (United States)
2. Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6056 (United States)
3. Department of Chemistry, Indiana University/Purdue University at Indianapolis, Indianapolis, Indiana 446205-2810 (United States)

Epitaxial La[sub 0.5]Sr[sub 0.5]CoO[sub 3] films with very smooth surface morphology were grown on (100) SrTiO[sub 3] and (100) MgO substrates by pulsed laser deposition. Scanning tunneling microscopy reveals that the thin film is formed by the coalescence of many aligned square mesas. The growth proceeds from the edges of terraces which are stacked on the mesa. Spiral growth is never observed. Films display an crystallographically isotropic metallic-like electrical conductivity but become semiconductor-like after vacuum annealing. The energy for carrier activation is 0.3 eV. The change of the electrical resistivity of La[sub 0.5]Sr[sub 0.5]CoO[sub 3] with oxygen pressure at high temperature is much less sensitive than that of YBa[sub 2]Cu[sub 3]O[sub 7[minus][ital x]].

• OSTI ID: 6892720
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:17; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

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