Epitaxial YBa2Cu3O7−x Thin Films: Scanning Tunneling Microscope Study of the Initial Stages of Epitaxial Growth, Growth Mechanism, and Effects of Substrate Temperature

Zhu, Shen; Lowndes, Douglas H.; Zheng, X. -Y.; Norton, David P.; Warmack, R. J.

doi:10.1557/PROC-237-541

Epitaxial YBa₂Cu₃O_7−x Thin Films: Scanning Tunneling Microscope Study of the Initial Stages of Epitaxial Growth, Growth Mechanism, and Effects of Substrate Temperature

Conference · Mon Jul 01 00:00:00 EDT 1991 · Materials Research Society Symposia Proceedings

DOI:https://doi.org/10.1557/PROC-237-541· OSTI ID:10114286

Zhu, Shen ^[1]; Lowndes, Douglas H. ^[2]; Zheng, X. -Y. ^[2]; Norton, David P. ^[2]; Warmack, R. J. ^[3]

Univ. of Tennessee, Knoxville, TN (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

The surface microstructure of epitaxial YBa₂Cu₃O_7-x films grown by pulsed laser ablation on (001) MgO and SrTiO₃ substrates has been studied at various growth stages, ranging in thickness from eight c-axis perpendicular unit cells to ∽220 nm. On MgO (lattice mismatch ∽9%) even the thinnest films grow unit cell-by-unit cell by an island growth mechanism. However, on SrTi0₃ (mismatch ∽1%), a transition from a layer-like growth mode to island growth is observed as the film thickness increases. Islands with clear spiral growth structures are observed in even the thinnest films on MgO, but for films grown on SrTiO₃ the spiral growth features are found only for film thicknesses slightly greater than the critical thickness for the switch to an island growth mode. The islands consist of stacks of atomically flat terraces whose step heights are multiples of the c-axis lattice parameter. The island density decreases significantly with increasing film thickness, while their diameters range from 50–400 nm, increasing with growth temperature. The terraced island grain morphology causes a surface roughness of from 10 to 30 nm (depending on growth temperature) in films ∽200 nm thick.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

DOE Contract Number:: AC05-84OR21400

OSTI ID:: 10114286

Report Number(s):: CONF-911202--28; ON: DE92005470

Resource Type:: Conference paper/presentation

Conference Information:: Journal Name: Materials Research Society Symposia Proceedings

Country of Publication:: United States

Language:: English

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Epitaxial YBa2Cu3O7−x Thin Films: Scanning Tunneling Microscope Study of the Initial Stages of Epitaxial Growth, Growth Mechanism, and Effects of Substrate Temperature

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Epitaxial YBa₂Cu₃O_7−x Thin Films: Scanning Tunneling Microscope Study of the Initial Stages of Epitaxial Growth, Growth Mechanism, and Effects of Substrate Temperature