In[sub [ital x]]Ga[sub 1[minus][ital x]]As thermophotovoltaic cell performance vs bandgap

Conference · Thu Jan 05 04:00:00 EST 1995 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:6891845

Wojtczuk, S; Gagnon, E; Geoffroy, L; Parodos, T ^[1]

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1. Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730-2396 (United States)

Measured data is presented on six compositions of indium gallium arsenide (In[sub [ital x]]Ga[sub 1[minus][ital x]]As) thermophotovoltaic (TPV) cells with bandgaps of 0.74, 0.68, 0.64, 0.59, 0.55 and 0.5 eV. The cell structures were identical, the only difference being the bandgap of the cell emitter and base layers. The tradeoff in electrical output versus cell bandgap was examined when the cells were illuminated with a 1000 [degree]C blackbody. The 0.64 eV bandgap (In[sub 0.62]Ga[sub 0.38]As) cells had the highest power output, representing a compromise between the higher photocurrent (but higher dark current) lattice-mismatched lower bandgap cells and the higher photovoltage, lower dark current, lattice-matched In[sub 0.53]Ga[sub 0.47]As higher bandgap cells.

• DOE Contract Number: FG02-93ER81619
• OSTI ID: 6891845
• Report Number(s): CONF-940101--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 321:1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140502* -- Solar Energy Conversion-- Thermonic & Thermoelectric conversion
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
BLACKBODY RADIATION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LATTICE PARAMETERS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
TERNARY ALLOY SYSTEMS
THERMOPHOTOVOLTAIC CONVERTERS