Low bandgap InGaAs thermophotovoltaic cells

Conference · Tue Dec 31 04:00:00 EST 1996

OSTI ID:435549

Wojtczuk, S ^[1]

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1. Spire Corp., Bedford, MA (United States)

Thermophotovoltaic (TPV) systems convert low energy photons from low temperature heat sources into electrical power by means of photovoltaic cells. This paper describes low-bandgap indium gallium arsenide (In{sub x}Ga{sub 1{minus}x}As) cells used in such systems whose composition can be tuned to particular wavelengths of interest. The intent of this paper is to give an overview of these cells and enough useful data so that TPV system designers can predict the performance of these cells in particular applications. Data are presented for 1.65 {micro}m (0.74 eV bandgap, In{sub 0.53}Ga{sub 0.47}As) as well as 2.25 {micro}m (0.55 eV, In{sub 0.72}Ga{sub 0.28}As) cutoff wavelength cells. Cell short-circuit photocurrent densities up to 5 A/cm{sup 2} and open-circuit voltages over 480 mV (0.74 eV cells) and 310 mV (0.55 eV) are obtainable. Measured responsivity, dark current, and series resistance are presented and are used to numerically determine maximum output power for 0.55 eV and 0.74 eV InGaAs cells at blackbody temperatures of 1,000 to 1,500 C.

• OSTI ID: 435549
• Report Number(s): CONF-960805--
• Country of Publication: United States
• Language: English

Related Subjects

30 DIRECT ENERGY CONVERSION
DESIGN
ELECTRICAL PROPERTIES
ENERGY GAP
GALLIUM ARSENIDES
INDIUM ARSENIDES
PERFORMANCE
PHOTOVOLTAIC CELLS
THERMOPHOTOVOLTAIC CONVERTERS