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Title: Thermally activated resistive behavior and flux motion in La[sub 2[minus][ital x]]Sr[sub [ital x]]CuO[sub 4] single-crystal thin films

Journal Article · · Physical Review, B: Condensed Matter; (United States)
 [1]
  1. NTT Interdisciplinary Research Laboratories, Nippon Telegraph and Telephone Corporation, 162 Tokai, Ibaraki 319-11 (Japan)

Thermally activated behavior of the resistive transition under magnetic fields has been studied in La[sub 2[minus][ital x]]Sr[sub [ital x]]CuO[sub 4] ([ital x]=0.1, 0.15, 0.2, and 0.3) single-crystal thin films. It is found that the resistivity [rho] below [ital T][sub [ital c]] scales as [rho]([ital T])=[rho][sub 0]exp[l brace][minus][ital U][sub 0][1[minus][ital T]/[ital T][sub [ital c]]([ital H])][sup [ital n]]/[ital k][sub [ital B]T][r brace], where [ital n]=3 for [bold H][parallel][bold c] and [ital n]=2.5 for [bold H][perpendicular][bold c]. This behavior is explained phenomenologically as the thermal-depinning of vortices in quasi-two-dimensional superconductors having small-sized dense point pins. Numerical fitting provides values for the effective pinning potential and the mean-field upper critical field, which delineates straight [ital H]-[ital T] phase boundaries.

OSTI ID:
6889915
Journal Information:
Physical Review, B: Condensed Matter; (United States), Vol. 46:21; ISSN 0163-1829
Country of Publication:
United States
Language:
English