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Title: Anisotropic and thermally activated resistive behavior in Nd sub 1. 85 Ce sub 0. 15 CuO sub 4 minus. delta

Journal Article · · Physical Review, B: Condensed Matter; (USA)
;  [1]
  1. NTT Opto-Electronics Laboratoires, Nippon Telegraph and Telephone Corporation, 162 Tokai-mura, Ibaraki-ken 319-11, (Japan)

An anisotropic-field-induced resistive transition has been measured for highly {ital c}-axis-oriented Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4{minus}{delta}} thin films as a function of a magnetic field {bold H} parallel and perpendicular to the {ital c} axis. It is found that the observed resistivity {rho} below {ital T}{sub {ital c}} scales as {rho}({ital T})={rho}{sub 0} exp{l brace}{minus}{ital U}({ital H})(1{minus}{ital T}/{ital T}{sub {ital c}}({ital H})){sup {ital n}}/{ital k}{sub {ital B}T}{r brace} with {ital n}=2 for {bold H}{perpendicular}{bold c} and {ital n}=3 for {bold H}{parallel}{bold c}. This resistive behavior is explained by thermally activated flux motion based on a depinning model for flux lines in a quasi-two-dimensional superconductor. Numerical fitting leads to an estimation of the upper critical field, which results in a straight {ital H}-{ital T} phase boundary in quite a wide range below {ital T}{sub {ital c}} with upward deviation at lower temperatures.

OSTI ID:
6883808
Journal Information:
Physical Review, B: Condensed Matter; (USA), Vol. 41:13; ISSN 0163-1829
Country of Publication:
United States
Language:
English