skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Variable-range hopping and positive magnetoresistance in insulating Y[sub 1[minus][ital x]]Pr[sub [ital x]]Ba[sub 2]Cu[sub 3]O[sub 7] crystals

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ; ;  [1]
  1. Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, Maryland 20742 (United States)

We have measured in-plane resistivity and magnetoresistance of insulating Y[sub 1[minus][ital x]]Pr[sub [ital x]]Ba[sub 2]Cu[sub 3]O[sub 7] ([ital x][similar to]0.63) crystals in magnetic fields up to 8 T. Mott variable-range-hopping transport [rho]=[rho][sub 0] exp[l brace]([ital T][sub 0]/[ital T])[sup [alpha]][r brace] has been observed with [alpha]=1/4 at low temperatures suggesting the metal-insulator transition caused by Pr doping is due to carrier localization. The magnetoresistance in the Mott variable-range-hopping regime is found to be positive and anisotropic, which may be caused by a decrease of the localiztion length induced by the magnetic field.

OSTI ID:
5425942
Journal Information:
Physical Review, B: Condensed Matter; (United States), Vol. 49:1; ISSN 0163-1829
Country of Publication:
United States
Language:
English