Studies of hydrogenated amorphous silicon. Yearly report, 15 August 1982-15 March 1984
As in the case of crystalline semiconductors, the incorporation of group III elements such as boron into hydrogenated amorphous silicon (a-Si:H) produces p-type doping. Unlike the crystalline case, the doping efficiency in a-Si:H is quite low and therefore relatively large amounts of boron must be incorporated into the a-Si:H to achieve the desired results. One major purpose of the present contract is therefore to characterize the local structural environment of boron using NMR. A second significant problem addressed during the past year has been the role of intrinsic and extrinsic defects in these films. For this work ESR has been the primary probe and in the past year films grown by both glow discharge and CVD have been studied. A final objective of the present work has been to study dopants in microcrystalline films with an eye to learning what fraction of the dopant atoms (phosphorous or boron) reside in the microcrystals and what fraction reside in the amorphous matrix.
- Research Organization:
- Naval Research Lab., Washington, DC (USA)
- DOE Contract Number:
- AI02-80CS83116
- OSTI ID:
- 6888963
- Report Number(s):
- DOE/CS/83116-T1; ON: DE84011888
- Country of Publication:
- United States
- Language:
- English
Similar Records
Studies of hydrogenated amorphous silicon
Spectroscopic studies of hydrogenated amorphous silicon: Annual contract report, 15 March 1985-15 March 1986
Related Subjects
36 MATERIALS SCIENCE
SILICON
ELECTRON SPIN RESONANCE
NUCLEAR MAGNETIC RESONANCE
AMORPHOUS STATE
BORON
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
PHOSPHORUS
CHEMICAL COATING
CRYSTAL STRUCTURE
DEPOSITION
ELEMENTS
MAGNETIC RESONANCE
NONMETALS
RESONANCE
SEMIMETALS
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion
360603 - Materials- Properties