Studies of hydrogenated amorphous silicon. Yearly report, 15 August 1982-15 March 1984

Technical Report · Sun Jan 01 04:00:00 EST 1984

OSTI ID:6888963

Carlos, W E

As in the case of crystalline semiconductors, the incorporation of group III elements such as boron into hydrogenated amorphous silicon (a-Si:H) produces p-type doping. Unlike the crystalline case, the doping efficiency in a-Si:H is quite low and therefore relatively large amounts of boron must be incorporated into the a-Si:H to achieve the desired results. One major purpose of the present contract is therefore to characterize the local structural environment of boron using NMR. A second significant problem addressed during the past year has been the role of intrinsic and extrinsic defects in these films. For this work ESR has been the primary probe and in the past year films grown by both glow discharge and CVD have been studied. A final objective of the present work has been to study dopants in microcrystalline films with an eye to learning what fraction of the dopant atoms (phosphorous or boron) reside in the microcrystals and what fraction reside in the amorphous matrix.

• Research Organization: Naval Research Lab., Washington, DC (USA)
• DOE Contract Number: AI02-80CS83116
• OSTI ID: 6888963
• Report Number(s): DOE/CS/83116-T1; ON: DE84011888
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
AMORPHOUS STATE
BORON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRON SPIN RESONANCE
ELEMENTS
MAGNETIC RESONANCE
NONMETALS
NUCLEAR MAGNETIC RESONANCE
PHOSPHORUS
RESONANCE
SEMIMETALS
SILICON
SURFACE COATING