Preparation of high-quality {micro}c-Si:H films by a hydrogen-radical CVD method
Book
·
OSTI ID:304342
- Tokyo Univ. of Agriculture and Technology, Koganei, Tokyo (Japan). Faculty of Technology
Undoped, phosphorus-, and boron-doped microcrystalline silicon ({micro}c-Si:H) have been prepared by using hydrogen radical chemical vapor deposition (HR-CVD) method. The relationship between deposition conditions and the structural, optical and electrical properties of {micro}c-Si:H films were investigated. Doped {micro}c-Si:H films with high conductivity and compensated material applicable to i-layers were obtained with high deposition rate. The crystalline volume fraction calculated from Raman spectrum showed a value over 0.9.
- OSTI ID:
- 304342
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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