Low-high heterojunction of c-Si substrate and {micro}c-Si:H film under rear contact for improvement of efficiency

Conference · Fri Dec 30 23:00:00 EST 1994

OSTI ID:191013

Okamoto, S; Nishida, M; Yamasaki, I; Komatsu, Y; Kaneiwa, M; Nammori, T ^[1]

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1. Sharp Corp., Shinjo, Nara (Japan). Energy Conversion Labs.

For improvement of conversion efficiencies of single-crystalline silicon (c-Si) solar cells, the low-high heterojunction structure of p-type c-Si substrate and a highly conductive B doped hydrogenated microcrystalline silicon ({micro}c-Si:H) film with a wide optical bandgap under a rear contact has been investigated. This paper reports that a conversion efficiency of 21.1% was obtained for a 5 cm x 5 cm c-Si solar cell with the {micro}c-Si:H film. This result has come from the examinations of the depositing conditions of the film and the improvement of rear reflection using a SiN film between the {micro}c-Si:H film and the rear contact. From TEM observations, it was clear that the {micro}c-Si:H film consisted of two kinds of domain classified by the crystallite degree of spatial order of Si atoms.

• OSTI ID: 191013
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALUMINIUM
BORANES
BORON
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
EFFICIENCY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
FABRICATION
FILL FACTORS
HYDROGEN
METALS
PALLADIUM ALLOYS
PASSIVATION
PERFORMANCE
SILANES
SILICON
SILICON NITRIDES
SILICON OXIDES
SILICON SOLAR CELLS
SILVER ALLOYS
SURFACE COATING
TITANIUM ALLOYS
TRANSMISSION ELECTRON MICROSCOPY