Polycrystal silicon recovery by means of a shaped laser pulse train

Journal Article · Fri Dec 15 04:00:00 EST 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90245· OSTI ID:6885047

Vitali, G; Bertolotti, M; Foti, G

A structure change from a polycrystal to single-crystal layer in ion-implanted Si samples has been obtained by single-pulse ruby-laser irradiation with a power density threshold of about 70 MW cm/sup -2/ (pulse length 50 nsec). Under these conditions surface mechanical damage is produced. A laser pulse train shaping technique was adopted to reduce the residual disorder in the layer after laser irradiation and to prevent mechanical damage.

• Research Organization: Istituto di Fisica-Facolta' di Ingegneria, Universita' di Roma, Rome, Italy
• OSTI ID: 6885047
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ATOMIC IONS
CHARGED PARTICLES
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
IONS
LASER RADIATION
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON
SILICON IONS