Lattice location of Te in laser-annealed Te-implanted silicon
Journal Article
·
· J. Appl. Phys.; (United States)
Backscattering of a 2.0-MeV He/sup +/ ion beam and channeling-effect techniques have been used to investigate the lattice location of Te in laser-annealed Te-implanted silicon. After Q-switched ruby-laser irradiation, an attenuation of 85% has been found in the Te signal for beam incidence along the <111> and the <110> axes of a Si crystal implanted with 400-keV Te to a dose of 10/sup 15/ ions/cm/sup 2/. The damaged amorphous layer recrystallizes completely after a 50-MW/cm/sup 2/ pulse of 50-nsec duration for <111>-oriented specimens; a lower power density is sufficient for <100> specimens. The Te profile broadens and shows accumulation at the Si surface for a power density of 60 MW/cm/sup 2/ on a <100> specimen.
- Research Organization:
- Istituto di Struttura della Materia, Corso Italia, 57, 195129 Catania, Italy
- OSTI ID:
- 5002425
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ATOMIC IONS
CHANNELING
CHARGED PARTICLES
CHEMICAL ANALYSIS
DEPTH DOSE DISTRIBUTIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
ION CHANNELING
ION IMPLANTATION
ION SCATTERING ANALYSIS
IONS
KEV RANGE
KEV RANGE 100-1000
LASER RADIATION
NONDESTRUCTIVE ANALYSIS
PHYSICAL RADIATION EFFECTS
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
RADIATIONS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SPATIAL DOSE DISTRIBUTIONS
TELLURIUM IONS
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ATOMIC IONS
CHANNELING
CHARGED PARTICLES
CHEMICAL ANALYSIS
DEPTH DOSE DISTRIBUTIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
ION CHANNELING
ION IMPLANTATION
ION SCATTERING ANALYSIS
IONS
KEV RANGE
KEV RANGE 100-1000
LASER RADIATION
NONDESTRUCTIVE ANALYSIS
PHYSICAL RADIATION EFFECTS
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
RADIATIONS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SPATIAL DOSE DISTRIBUTIONS
TELLURIUM IONS