Laser annealing of self-ion damaged silicon

Journal Article · Thu Nov 01 04:00:00 EST 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91260· OSTI ID:6019376

Foti, G; Campisano, S U; Baeri, P; Rimini, E; Tseng, W F

Partially damaged self-ion implanted Si(100) has been irradiated by a ruby laser pulse (lambda=0.69 ..mu..m, t/sub p/=15 ns). Channeling effect technique measurements and TEM micrographs show the reordering of the implanted layer in the laser energy range 1.5--2.5 J/cm/sup 2/. No polycrystalline transition has been detected. Calculations in terms of local melting of the disordered zone explain the experimental data.

• Research Organization: Istituto di Struttura della Materia: Catania, Corso Italia 57, Italy
• OSTI ID: 6019376
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
320302* -- Energy Conservation
Consumption
& Utilization-- Industrial & Agricultural Processes-- Materials
ANNEALING
CHANNELING
CHARGED PARTICLES
CRYSTALS
DAMAGE
ELECTRON MICROSCOPY
HEAT TREATMENTS
HEATING
ION IMPLANTATION
IONS
LASER-RADIATION HEATING
LASERS
MATHEMATICAL MODELS
MELTING
MICROSCOPY
PHASE TRANSFORMATIONS
PLASMA HEATING
POLYCRYSTALS
PULSES
RUBY LASERS
SOLID STATE LASERS