Pulsed laser annealing of aluminum
Conference
·
OSTI ID:6864401
Pulsed ruby laser irradiation of unimplanted single crystal and implanted polycrystalline Al has been studied with ion beam analysis and TEM. Results show that Al is melted to a depth of approx. 0.9 ..mu..m with a 4.2 J/cm/sup 2/, 15 ns pulse, and that vacancies are quenched into Al during resolidification. Diffusion of Zn in liquid Al is observed, and a melt time of approx. 65 ns is estimated for a 3.8 J/cm/sup 2/, 30 ns pulse. The observations are in reasonable agreement with calculations of sample temperature and melt times. We observe no precipitation of AlSb in liquid Al for Sb-implanted Al, and conclude that the nucleation time satisfies 50 ns less than or equal to t/sub nuc/ less than or equal to 200 ns. We find no evidence for amorphous Al after irradiation of single crystal Al with energies greater than or equal to 1.5 J/cm/sup 2/.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6864401
- Report Number(s):
- SAND-80-2610C; CONF-801124-23
- Country of Publication:
- United States
- Language:
- English
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