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Defects and AlSb precipitate nucleation in laser-irradiated aluminium

Conference ·
OSTI ID:6075043
Lattice defects and precipitates induced in unimplanted and Sb-implanted <110> single crystal Al by single pulse irradiation with a Q-switched ruby laser were studied using ion beam analysis and electron microscopy. The absorbed laser energy during irradiation is directly measured in these studies to allow precise numerical modeling of the melt times and temperature profiles. For unimplanted Al, slip deformation gives rise to increased channeled yields throughout the analyzed depth and occurs for energies well below the melt threshold energy of 3.5 J/cm/sup 2/. Slip deformation is also observed for irradiation energies above the melt threshold energy, and melting is accompanied by a discontinuous increase in the minimum channeling yield.
Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6075043
Report Number(s):
SAND-81-2526C; CONF-811122-28; ON: DE82003532
Country of Publication:
United States
Language:
English